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Technology evolution for silicon nano-electronics (Record no. 81952)

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000 -LEADER
fixed length control field	05560nam a2200433 a 4500
001 - CONTROL NUMBER
control field	EBC1872562
003 - CONTROL NUMBER IDENTIFIER
control field	MiAaPQ
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field	m o d \|
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field	cr cn\|\|\|\|\|\|\|\|\|
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field	110630s2011 sz a sb 101 0 eng d
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
Canceled/invalid LC control number	2011377587
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	3037850515
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	9783037850510
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	9783038134947 (e-book)
035 ## - SYSTEM CONTROL NUMBER
System control number	(MiAaPQ)EBC1872562
035 ## - SYSTEM CONTROL NUMBER
System control number	(Au-PeEL)EBL1872562
035 ## - SYSTEM CONTROL NUMBER
System control number	(CaPaEBR)ebr10604254
035 ## - SYSTEM CONTROL NUMBER
System control number	(OCoLC)769461004
040 ## - CATALOGING SOURCE
Original cataloging agency	MiAaPQ
Transcribing agency	MiAaPQ
Modifying agency	MiAaPQ
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number	TK7874.84
Item number	.I58 2011
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number	621.3815
Edition number	23
111 2# - MAIN ENTRY--MEETING NAME
Meeting name or jurisdiction name as entry element	International Symposium on Technology Evolution for Silicon Nano-Electronics
Date of meeting	(2010 :
Location of meeting	Tokyo Institute of Technology)
245 10 - TITLE STATEMENT
Title	Technology evolution for silicon nano-electronics
Medium	[electronic resource] :
Remainder of title	selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan /
Statement of responsibility, etc.	edited by Seiichi Miyazaki and Hitoshi Tabata.
246 30 - VARYING FORM OF TITLE
Title proper/short title	Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics
246 30 - VARYING FORM OF TITLE
Title proper/short title	International Symposium on Technology Evolution for Silicon Nano-Electronics
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc.	Stafa-Zurich, Switzerland ;
--	Enfield, N.H. :
Name of publisher, distributor, etc.	Trans Tech Publications,
Date of publication, distribution, etc.	c2011.
300 ## - PHYSICAL DESCRIPTION
Extent	xi, 234 p. :
Other physical details	ill.
440 #0 - SERIES STATEMENT/ADDED ENTRY--TITLE
Title	Key engineering materials,
International Standard Serial Number	1013-9826 ;
Volume/sequential designation	v. 470
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note	Includes bibliographical references and indexes.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note	High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.
533 ## - REPRODUCTION NOTE
Type of reproduction	Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Nanoelectronics
Form subdivision	Congresses.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Nanostructured materials
Form subdivision	Congresses.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Metal oxide semiconductors
Form subdivision	Congresses.
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term	Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Miyazaki, Seiichi.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Tabata, Hitoshi.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element	ProQuest (Firm)
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier	<a href="http://ebookcentral.proquest.com/lib/aitie/detail.action?docID=1872562">http://ebookcentral.proquest.com/lib/aitie/detail.action?docID=1872562</a>
Public note	Click to View

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				TUS: Midlands, Main Library	TUS: Midlands, Main Library	Athlone Online	18/08/2017		eBook	18/08/2017	18/08/2017	Ebook